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1 of 16 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information bifet hbt ldmos nc vreg2 rfin 7 8 1 2 3 4 5 6 9 10 11 12 18 17 16 15 14 13 24 23 22 21 20 19 vcc vcc vcc nc vbias vreg1 nc nc bias nc nc nc nc nc rfout rfout rfout rfout rfout rfout pwr ref RF6886 3.6v, 100mhz to 1000mhz linear power amplifier the RF6886 is a linear, high power, high efficiency amplifier designed to use as a final stage/driver in linear or saturated transmit applications. the device is manu- factured on an advanced ingap hbt process and is provided in a 24-pin leadless chip carrier with backside ground. extern al matching allows for use in standard bands from 100 mhz to 1000 mhz. features ? 100 mhz to 1000 mhz ? single 3.6v power supply ? 34dbm op1db ? 36.5dbm saturated output power ? >50% efficiency applications ? cdma/gsm/edge repeater final amplifier ? 450mhz and 865mhz to 955mhz ism band amplifier ? general purpose high power amplifier ? tetra handheld/walkie-talkie final amplifier ? hpa driver ds100817 ? package: qfn, 24-pin, 4mmx4mm RF68863.6v, 100 mhz to 1000 mhz lin- ear power amplifier RF6886sr 7? reel with 100 pieces RF6886sq sample bag with 25 pieces RF6886tr7 7? reel with 750 pieces RF6886tr13 13? reel with 2500 pieces RF6886pck-410 865mhz to 955mhz pc ba with 5-piece sample bag RF6886pck-411 433mhz to 470mhz pcba with 5-piece sample bag
2 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit vc2 collector quiescent bias current (i cq2 ) 350 ma vc1 collector quiescent bias current (i cq1 ) 150 ma maximum supply current (i cc1 +i cc2 ) 3100 ma device voltage (v d ) 4.0 v power dissipation 5 w operating lead temperature (t ambient ) -40 to +85 c max rf input 50 ? output load 12 dbm max rf output 50 ? load 38 dbm output load vswr see theory of operation sec- tion storage temperature range -40 to +150 c operating junction temperature (t j ) 150 c esd rating - human body model (hbm) class 1a v moisture sensitivity level (msl) msl1 parameter specification unit condition min. typ. max. typical electrical specifications for 433mhz to 470mhz see 433mhz to 470mhz evaluation board schematic operating frequency 433 450 470 mhz v cc =3.6v, v reg1 =v reg2 =3.1v, i cq total=390ma op1db 34.5 dbm small signal gain 33 db saturated output power (p sat ) 36.8 dbm saturated efficiency 55 % saturated output power (p sat ) 36.3 dbm v cc =3.3v, v reg1 =v reg2 =3.1v, i cq total=380ma saturated efficiency 54.5 % saturated output power (p sat ) 35.2 dbm v cc =3.0v, v reg1 =v reg2 =3.1v, i cq total=370ma saturated efficiency 53 % tetra adj channel power -38 dbc v cc =3.6v, v reg1 =v reg2 =2.7v, i cq total=187ma tetra: par=2.6db, p out =32dbm, 24.3khz channel bw, adj offset=25khz, alt offset=50khz cdma: par=4.5db, p out =32dbm, 1.23mhz channel bw, adj ch offset/bw=750khz/30khz, alt ch offset/bw=1.98mhz/30khz tetra alt channel power -53 dbc cdma adj channel power -50 dbc cdma alt channel power -67 dbc caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. see 865mhz to 955mhz evaluation board schematic. t a =25c operating frequency 865 900 955 mhz v cc =3.6v, v reg1 =v reg2 =3.1v, i cq total=390ma op1db 33.5 dbm small signal gain 31.0 db saturated output power (p sat ) 36.2 dbm saturated efficiency 50 54 % saturated output power (p sat ) 35.5 dbm v cc =3.3v, v reg1 =v reg2 =3.1v i cq total=380ma saturated efficiency 53.5 % saturated output power (p sat ) 34.4 dbm v cc =3.0v, v reg1 =v reg2 =3.1v i cq total=370ma saturated efficiency 52.5 % cdma adj channel power -52 dbc cdma: par=4.5db, p out =31.5dbm, 1.23mhz channel bw, adj ch offset/bw=750khz/30khz, alt ch offset/bw=1.98mhz/30khz cdma alt channel power -66 dbc quiescent current (i cq ) 340 390 420 ma v cc =3.6v, v reg1 =v reg2 =3.1v leakage current 10 ua v cc =3.6v, v reg1 =v reg2 =0v current at v reg1 and v reg2 (i reg1 and i reg2 ) 3mav cc =3.6v, v reg1 =v reg2 =3.1v. v reg1/2 supplied through 220 ? bias resistance (see ev aluation board schematic). thermal resistance, r th 11 c/w
4 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin function description interface schematic 1, 2, 3 vcc1 inter-stage match and bias for first stage output. connect inter-stage matching capacitor to pin with a short trace. connect low frequency bypass capacitor to this pin with a long trace. see evaluation board lay- out for detail. 5vreg2 this pin requires a regulated supply to set output stage dc bias. 6rf in rf input. an external blocking capaci tor is required if this pin is con- nected to dc path. 4, 7-12, 20, 21 nc no connect. 13, 14, 15, 16, 17, 18 rf out rf output and bias for the output stage. the power supply for the out- put transistor needs to be supplied to this pin. this can be done through an rf inductor that supports the required dc currents. 19 vreg1 this pin requires a regulated supply to set driver stage dc bias. 22 vcc bias bias circuitry supply voltage. 23 pwr sense pwr sen and pwr ref pins can be used in conjunction with an exter- nal feedback path to provide an rf power control function for the RF6886. the power control function is based on sampling the rf drive to the final stage of the RF6886. 24 pwr ref same as pin 23. pkg base gnd ground connection. the backside of the package should be connected to the ground plane through a short path, i.e., vias under the device are required. rf in vcc bond wire inductance bias rf out bias rf out pwr sen pwr ref bias
5 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . theory of operation this section provides specific guidelines for operation of RF6886. applications can generally be placed into two categories: 1. high power applications ? output power ranging between 34.5 - 36.5dbm ? efficiency >50% in band of interest 2. linear applications ? RF6886 shows linearity along the lines of a handset powe r amplifier in terms of adjacent channel power (acp) performance, with the distinct advantage of obtaining ac p compliance at >2x comparative output power. resultant output power for linear operation will depend on the waveform being considered. all pertinent specifications and performance curves are seen in the tabular and graph sections of the data sheet. the first standard evaluation board has been matche d for 865mhz to 955mhz. operation with v cc =3.6v shows output power >36dbm and efficiency >50%. for reduced power ranges, efficiency is ma intained, with no change to output match, by lowering v cc . see data for 3.3/3.0v in the tables provided. the standard evaluation board also demonstrates impressive linearity, shown with conventional cdma modulation. the same data set format is also provided for the 433mhz to 470mhz evaluation board. nominal data is taken with v cc =3.6v and v reg1 /2=3.1v. for linear operation, it has been shown that reducing v reg1 /2 to 2.7 - 2.8v enhances performance. this can be explained by observing how the co mpression characteristic behaves. operation with vreg=3.1v shows gradual (soft) compression once power exceeds 31dbm. with vreg reduced to 2.7 - 2.8v, small signal gain drops by 1 - 2db. self bias is now more prominent at 31dbm, and gain expansion offsets slow comp ression. the result is flattening of the gain characteristic, extending effective compression point out in power. waveform di stortion is reduced as compared to the vreg=3.1v case, and adjacent channel power improves. the sole advantage in using vreg=3.1v would be a slightly higher value for saturated out- put power. low thermal resistance enables reliable high power operation, provided that output load is set to achieve efficiency equal to o r better than that seen on the rfmd evaluation boards. the maximum rating for output load vswr on page 2 calls ou t requirement for discussion in this section. RF6886 has shown excellent performance into 50 ? , but any system using it as a final amplifier will have to take vswr variation into account. test on properly matched evaluation board has shown that rated ou tput power is obtained with 10dbm at rf input. practically speaking then, at or near 10dbm would be a maximum reasonab le limit for input power. when considering vswr variation, ruggedness is one of the main considerations. ruggedness here, being the worse case vswr which can be tolerated for a tran- sient period without damage to the device. the following maximum vswr limits apply: v cc freq p out into 50 ? load (across band) maximum practical input drive maximum output vswr (survival) vmhz dbm dbm 3.6 865 to 955 36.2 to 35.2 10 3.5:1 3.3 35.5 to 34.4 10 5.0:1 3 34.4 to 33.4 8 5.0:1 3.6 433 to 470 37 to 36.4 10 3.5:1 3.3 36.3 to 35.6 10 5.0:1 3 35.2 to 34.5 8 5.0:1
6 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . in each case, vswr was tested over phase, with device on/off cycle done several times at phase angle where current was max- imum. test showed that the best off/on sequence for RF6886 is as follows: turn on: 1. apply v cc 2. apply v ref1/2 3. apply drive at rf input turn of f: 1. remove drive at rf input 2. bring down voltage at v ref1/2 3. bring down v cc (not necessary in system of course) many systems will use closed loop power co ntrol. when taking output vswr variation into account, the limits in table above still apply, with same practical maximum limit on rf drive. at some phase angles, higher output powers will not be attainable. thus, a limit on maximum drive should be taken into account to prevent overdrive of the device by power control circuit. the vswr limits set here apply to the most demanding case, wh ere input drive is set for maximum output power. for example, pout >36dbm, v cc =3.6v, pin=10dbm. it is entirely conceivable that the am plifier be used in a linear application at backed off power. in that case, it follows that a higher vswr could be tolerated. as an example, consider 32dbm output power with v cc =3.6v. test showed that power control loop would achieve 32d bm from 865mhz to 955mhz over phase into 5:1 vswr. the increased vswr specification as compared to the 3:5: 1 limit in table comes about for the following reason: the harshest condition is encountered at phase angle where 10dbm drive results in forward power >38.5dbm and current > >3000ma. a power control loop sensing forward (coupled) power wo uld back input drive down in this case and prevent dam- age. that provided it reacts quickly enough. the more limiting factor in this case, phase angle for lowest power presents a sit u- ation where target power cannot be achieved. that even if drive is allowed to go beyond practical maximum. but because the amplifier was seen to achieve 32dbm over phase along with ruggedness, the increased vswr specification becomes reason- able in the presence of power control and lower output power requirement. so, a multitude of scenarios could exist, with test being required to determine allowable vswr specification. power control can be implemented via se veral different methodologies, using ci rcuitry external to RF6886. one method already touched upon, sampling forward coupled output power and feedback to adjust at one of two points in the system: 1. with constant drive level at RF6886 input, adjust voltage level at v reg1 and/or v reg2 . v reg1/2 can be tied together, or one of the two can be kept constant with the other adjusted. 2. with v ref1/2 constant, rf drive at device input can be adjust ed via feedback to a system control point behind RF6886. two RF6886 output pins are also available for use in a power control scheme, pwr sense (pin 23) and pwr ref (pin 24). viewing the evaluation board schematics, it ca n be seen that both pins are tied to v cc through 390 ? resistors. both pins sink current, resulting in following voltages at respective board connectors: v_pwr ref = v cc - 390*i_pwr_ref v_pwr sense = v cc - 390*i_pwr_sense
7 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . v_pwr_ref output pin yields a voltage proportional to dc co mponent of total output stage drive current, while v_pwr_sense output pin does likewise for dc + rf components. subtraction between these voltages gives result proportional to rf current only, and therefore output power as well. graphs of log 10 (v_pwr ref - v_pwr sense) vs. RF6886 power out are shown for two scenarios: 1. rf drive at device input = constant 10dbm, with ramp at v reg1/2 . 2. v reg1/2 = constant 3.1v, with rf drive ramp from 0 - 10dbm. in both cases, it can be seen that output power versus log of this difference maintains a linear relationship up to 33.5dbm. non-linear behavior past 33.5dbm is caused by 2 contributors: 1. compression beginning to take ef fect at RF6886 1st and/or 2nd stage. 2. pwr_ref and pwr_sense transistor collector voltage redu ction and associated compression. note that changing 390 ? value will influence curve shape and shift graphs up/down on y-axis. as an additional exercise to investigate #2 above, like graphs are shown for 180 ? pull up resistor vs. 390 ? . with 180 ? in place, internal pwr_ref and pwr_sense transistors retain higher collector voltage, and do not enter into compression. as a result, we see altered curves as compared to 390 ? case. log (v_pwr_ref - v_pwr_se nse) continue to increase, with increasing slope, vs. output power. one other in teresting data point, the curve for ramp at v reg1/2 now closely resembles that for ramp at rf input. the curves will remain consistent for a given frequency and temperature provided the following remain constant: 1. ref/sense resistance (does not change va lue in design. this only noted for clarity) 2. output load vswr practically speaking then, this method of fers a relatively simple approach, with presumably less accuracy as compared to closed loop control which couples forward power at output. in the coupled power method, vswr variation will of course also impact accuracy. here are general schematics for approa ches utilizing pwr_ref/pwr_sense pins in described power control schemes: approach 1:
8 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . approach 2: approach #1 feeds back to variable gain stage behind RF6886. approach #2 utilizes feedback to v reg1/2 pins of RF6886. recall log of the loop reference voltage is shown in graphs for both methods. in the circuits shown above, no log function is performed. data for v_delta = (v_pwr_ref - v_pwr_sense) vs. output power out is collected, and loop reference voltage is set to v_delta(s) for corresponding output power(s). data ca n be collected at selected frequency and temperature points, depending on accuracy desired in a particular application. next, a discussion covering RF6886 used in balanced configuration. the application as depicted here: this configuration can be implemented with readily available surface mount hybrid couplers, and offers significant perfor- mance and reliability advantages . use single ended RF6886 3.6v specifications for reference: 1. >38.5dbm output power 2. linear performance with 2.5db increase in power for equivalent adjacent channel power specification 3. immunity to antenna vswr variation
9 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . one key consideration will be output side isolated port 50 ? termination resistance. in the case where output vswr deviates significantly from 50 ? , reflected power will be absorbed in the isolated port. this will require placement of resistor bank capa- ble of handling power dissipation while fault condition exists. finally, consider the maximum allowable operating device voltage, listed at 4.0v in the table on page 2. operating with v cc =4.0 v enables higher compression point, which becomes attractive in two types of applications: 1. high power, high efficiency 2. linear, requiring specification compliance at higher power level viewing curves in the graph section, it can be seen that devi ce junction temperature stays below 150c (85c ambient) up to rated power levels. junction temperature becomes a more critical specification with higher operating voltage. it should be stressed again here that a properly matched output load impedance is required to provide high efficiency. load impedance has been measured on both standard evaluation boards. the table below contains that data: in any application where greater than 3.6v operation is bein g considered, use of an isolator at RF6886 output is recom- mended. this, of course, excludes the ba lanced configuration already discussed. the recommendation would also hold for v cc ? 3.6v, in cases where potential output vswr conditions exceed those outlined previously in this section. freq standard evaluation board load impedance freq standard evaluation board load impedance mhz a+jb ? mhz a+jb ? 865 1.983+j 0.157 433 1.997-j 0.941 900 1.983+j 0.579 450 1.866-j 0.251 928 1.953+j 0.789 470 1.778-j 0.268 955 1.969+j 0.914
10 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic 433mhz to 470mhz 100 pf 12.55nh 220 ? 2.2 uf 1uf 390 ? 1uf 1uf 1 uf 220 pf 10uf 220 ? 1uf 22 pf 8.2 nh @ l3 100 pf rf in vreg2 pwr ref pwr sen 390 ? vreg1 rf out vcc 10 pf @ c16 27//10//1.2 pf @ c17/18/19 0 ? 0 ? 0 ? 0 ? @ c46 coilcraft 1606 10uf 10uf key locations shown in red type. output capacitors are johanson hi-q tight tolerance 0 ? jumpers in place of ferrites used on 865 mhz to 955 mhz board 2.2 uf 2.2 uf 7 8 1 2 3 4 5 6 9 10 11 12 18 17 16 15 14 13 24 23 22 21 20 19 bias
11 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic 865mhz to 955mhz 39 pf 5.6 nh 220 ? 27 pf 1uf 390 ? 1uf 1uf 1 uf @ c4 220 pf 10uf 220 ? 1uf 7.5 pf 2.7 nh @ l3 39 pf rf in vreg2 pwr ref pwr sen 390 ? vreg1 rf out vcc 15//12//10 pf @ c8//c13//c14 5.6/0.5 pf @ c17/c18 @ c6 coilcraft 1606 10uf 10uf key locations shown in red type. output capacitors are johanson hi-q tight tolerance 2 a, low dc resistance ferrites (see evaluation board bom) 2.2 uf 1.5 nh 2.2 uf 7 8 1 2 3 4 5 6 9 10 11 12 18 17 16 15 14 13 24 23 22 21 20 19 bias
12 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . typical electrical performance, 25c: 433mhz to 470mhz evaluation board schematic 865mhz to 955mhz evaluation board
13 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . thermal performance, 900mhz, 85c:
14 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . power control performance, ref/sense pull-up resistance=390 ? , 25c: 865mhz to 955mhz evaluation board, constant power at rf in, ramp at v reg1/2 865mhz to 955mhz evaluation board, power ramp at rf in, constant 3.1v at v reg1/2
15 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . power control performance, ref/sense pull-up resistance=180 ? , 25c: 865mhz to 955mhz evaluation board, constant power at rf in, ramp at v reg1/2 865mhz to 955mhz evaluation board, power ramp at rf in, constant 3.1v at v reg1/2
16 of 16 RF6886 ds100817 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing

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